21![NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from](https://www.pdfsearch.io/img/1b6c6c0ed3d32158d969b966518cf19c.jpg) | Add to Reading ListSource URL: cdn.macom.comLanguage: English - Date: 2014-04-11 09:21:19
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22![NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other](https://www.pdfsearch.io/img/89ae00c7b5991264ecb375ab23a7e588.jpg) | Add to Reading ListSource URL: cdn.macom.comLanguage: English - Date: 2014-04-11 09:17:13
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23![FRA UNHO F ER I NSTIT U T E F OR OR G A N IC E L E C TRON ICS, ELECTRON BEA M A N D PLA SM A TECH N OLOGY FEP i-P ULSE ® PULSED POWER SUPPLY FOR PULSE MAGNETRON SPUTTERING IN UNIPOLAR/BIPOLAR/PULSE PACKAGE MODES FRA UNHO F ER I NSTIT U T E F OR OR G A N IC E L E C TRON ICS, ELECTRON BEA M A N D PLA SM A TECH N OLOGY FEP i-P ULSE ® PULSED POWER SUPPLY FOR PULSE MAGNETRON SPUTTERING IN UNIPOLAR/BIPOLAR/PULSE PACKAGE MODES](https://www.pdfsearch.io/img/ce39f0a6bbab8b17ed0d3635f2b97c97.jpg) | Add to Reading ListSource URL: www.fep.fraunhofer.deLanguage: English - Date: 2015-06-19 12:20:38
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24![](/pdf-icon.png) | Add to Reading ListSource URL: home.fnal.gov- Date: 2001-05-21 17:10:52
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25![PP Ext Review Template for 2004 PP Ext Review Template for 2004](https://www.pdfsearch.io/img/75a22666be1760797ddadc53ac15e923.jpg) | Add to Reading ListSource URL: www.cfn.ist.utl.ptLanguage: English - Date: 2010-02-23 05:26:07
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26![MAGXGaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty Rev. V1 MAGXGaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty Rev. V1](https://www.pdfsearch.io/img/b2f25339c460322400a3f594ab301d7f.jpg) | Add to Reading ListSource URL: cdn.macom.comLanguage: English - Date: 2014-03-17 09:21:16
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27![Improved Characteristics of Laser Source of Ions Using a Frequency Mode Laser Khaydarov R.T. Scientific Research Institute of Applied Physics at the National University of Uzbekistan, Vuzgorodok -17, Tashkent, Uzb Improved Characteristics of Laser Source of Ions Using a Frequency Mode Laser Khaydarov R.T. Scientific Research Institute of Applied Physics at the National University of Uzbekistan, Vuzgorodok -17, Tashkent, Uzb](https://www.pdfsearch.io/img/99506a1aaf7250b3d0bd4aa8f4adc423.jpg) | Add to Reading ListSource URL: www.cfn.ist.utl.ptLanguage: English - Date: 2010-02-23 05:25:27
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28![COAXIAL PULSED 3 MW RF POWER INPUT FOR 176 MHz ACCELERATING STRUCTURE V.L. Auslender, K.N. Chernov, I.V. Gornakov, I.V. Kazarezov, I.G. Makarov, N.V. Matyash, G.N. Ostreiko, A.D. Panfilov, G.V. Serdobintsev, V.V. Tarnets COAXIAL PULSED 3 MW RF POWER INPUT FOR 176 MHz ACCELERATING STRUCTURE V.L. Auslender, K.N. Chernov, I.V. Gornakov, I.V. Kazarezov, I.G. Makarov, N.V. Matyash, G.N. Ostreiko, A.D. Panfilov, G.V. Serdobintsev, V.V. Tarnets](https://www.pdfsearch.io/img/ddceb84824017004760896776aa91dd9.jpg) | Add to Reading ListSource URL: vant.kipt.kharkov.uaLanguage: English - Date: 2008-10-15 10:15:52
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29![Новые методы ускорения, сильноточные пучки APPLICATION OF TPI1-10k/50 THYRATRONSFOR BUILDING A MODULATOR, INTENDED FOR SUPPLYOF INDUCTIVE-RESISTIVE LOAD IN DOUBLE-PULSE MODE A.V.Akim Новые методы ускорения, сильноточные пучки APPLICATION OF TPI1-10k/50 THYRATRONSFOR BUILDING A MODULATOR, INTENDED FOR SUPPLYOF INDUCTIVE-RESISTIVE LOAD IN DOUBLE-PULSE MODE A.V.Akim](https://www.pdfsearch.io/img/89a359de79c76c72682ee3b5e8500a0d.jpg) | Add to Reading ListSource URL: vant.kipt.kharkov.uaLanguage: English - Date: 2008-05-07 03:56:55
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30![MAGX125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 MAGX125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11](https://www.pdfsearch.io/img/931b8c3258efe87641b7b737b2c95200.jpg) | Add to Reading ListSource URL: cdn.macom.comLanguage: English - Date: 2012-01-13 06:15:24
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